Characterisation of interface states of directly bonded structures

被引：0
|
作者：
Buldygin, SA [1 ]
Golod, SV [1 ]
Kamaev, GN [1 ]
Skok, EM [1 ]
Tarlo, DG [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997 | 1998年 / 160卷
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D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of directly bonded Si/Si interfaces were investigated for the first time using a contactless and nondestructive Computer Controlled Microwave Transient Photoconductivity (CCMPT) method. Analysis of temperature dependence of photoconductivity allowed to determine the meanings of the energy and thermal capture cross section for interface defects. The experimental data obtained on Si wafers and bonding structures are presented.
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页码：277 / 280
页数：4
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