Characterisation of interface states of directly bonded structures

被引：0
|
作者：
Buldygin, SA [1 ]
Golod, SV [1 ]
Kamaev, GN [1 ]
Skok, EM [1 ]
Tarlo, DG [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997 | 1998年 / 160卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of directly bonded Si/Si interfaces were investigated for the first time using a contactless and nondestructive Computer Controlled Microwave Transient Photoconductivity (CCMPT) method. Analysis of temperature dependence of photoconductivity allowed to determine the meanings of the energy and thermal capture cross section for interface defects. The experimental data obtained on Si wafers and bonding structures are presented.
引用
收藏
页码：277 / 280
页数：4
相关论文
共 50 条
  • [1] A study of interface states of directly bonded silicon-on-insulator structures
    Buldygin, SA
    Golod, SV
    Kamaev, GN
    Skok, EM
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (1-3) : 107 - 111
  • [2] Study of interface states of directly bonded silicon-on-insulator (SOI) structures
    Buldygin, SA
    Bulycheva, TV
    Golod, SV
    Drofa, AT
    Kamaev, GN
    Skok, EM
    APEIE-98: 1998 4TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1, 1998, : 49 - 53
  • [3] INTERFACE CHARGE CONTROL OF DIRECTLY BONDED SILICON STRUCTURES
    BENGTSSON, S
    ENGSTROM, O
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) : 1231 - 1239
  • [4] Interface of directly bonded GaAs and InP
    Jin-Phillipp, NY
    Sigle, W
    Black, A
    Babic, D
    Bowers, JE
    Hu, EL
    Rühle, M
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) : 1017 - 1024
  • [5] Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates
    Toyoda, Eiji
    Sakai, Akira
    Isogai, Hiromichi
    Senda, Takeshi
    Izunome, Koji
    Omote, Kazuhiko
    Nakatsuka, Osamu
    Zaima, Shigeaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (02)
  • [6] Interface resistivity of directly bonded Si wafers
    Kanno, Ikuo
    Yamashita, Makoto
    Nomiya, Seiichiro
    Onabe, Hideaki
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 7938 - 7943
  • [7] Frequency-dependent conductance and capacitance of the unipolar semiconductor homojunction and estimation of interface-states parameters in Si/Si directly bonded structures
    Stuchinsky, VA
    SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS, 2003, 2003 (19): : 184 - 194
  • [8] Interface of directly bonded InP wafers for vertical couplers
    Jin-Phillipp, NY
    Liu, B
    Bowers, JE
    Hu, EL
    Kelsch, M
    Thomas, J
    Rühle, M
    APPLIED PHYSICS LETTERS, 2002, 80 (08) : 1346 - 1348
  • [9] Charged defects at the interface between directly bonded silicon wafers
    Laporte, A
    Sarrabayrouse, G
    Benamara, M
    Claverie, A
    Rocher, A
    PeyreLavigne, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A): : 5502 - 5506
  • [10] Defect compensation at the interface between directly bonded silicon wafers
    Laporte, A
    Lescouzères, L
    PeyreLavigne, A
    Sarrabayrouse, G
    MATERIALS SCIENCE AND TECHNOLOGY, 1998, 14 (12) : 1299 - 1302
12345