Band structure investigation of strained Si1-xGex/Si coupled quantum wells

被引：0
|
作者：
Lu, F. [1 ]
Fan, W. J. [1 ]
Dang, Y. X. [1 ]
Zhang, D. H. [1 ]
Yoon, S. F. [1 ]
Wang, R. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2007年 / 4卷 / 04期
关键词：
band structure; coupled quantum well; 8-band k center dot p method; strain effect; valence band; hole subband energy; coupling effect;
D O I：
10.1504/IJNT.2007.013977
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The band structure of Si1-xGex/Si coupled quantum wells (CQW) was calculated with the 8-band k - p method. Both strain and spin-orbit split-off band effect were taken into account. The subband energy of the Si0.6Ge0.4/Si quantum well as a function of barrier width and well width was calculated. Barrier width varies between 20-60 angstrom while well width varies between 30-110 angstrom. Finally, the relationship between subband energy and Ge composition range from 10% to 60% was also shown.
引用
收藏
页码：431 / 440
页数：10
相关论文
共 50 条
  • [41] Electron tunneling in a strained n-type Si1-xGex/Si/Si1-xGex double-barrier structure
    Hung, K. M.
    Cheng, T. H.
    Huang, W. P.
    Wang, K. Y.
    Cheng, H. H.
    Sun, G.
    Soref, R. A.
    APPLIED PHYSICS LETTERS, 2008, 93 (12)
  • [42] Femtosecond intersubband scattering of holes in Si1-xGex/Si quantum wells
    Kaindl, RA
    Woerner, M
    Wurm, M
    Reimann, K
    Elsaesser, T
    Miesner, C
    Brunner, K
    Abstreiter, G
    PHYSICA B-CONDENSED MATTER, 2002, 314 (1-4) : 255 - 258
  • [43] INTERSUBBAND ABSORPTION IN SI1-XGEX SI MULTIPLE QUANTUM-WELLS
    KARUNASIRI, RPG
    PARK, JS
    MII, YJ
    WANG, KL
    APPLIED PHYSICS LETTERS, 1990, 57 (24) : 2585 - 2587
  • [44] Structure determination of the clean (001) surface of strained Si on Si1-xGex
    Shirasawa, Tetsuroh
    Takeda, Sakura Nishino
    Takahashi, Toshio
    APPLIED PHYSICS LETTERS, 2015, 106 (06)
  • [45] Band gap narrowing in strained Si1-xGex base on (001) Si substrate
    Jin, HY
    Zhang, LC
    SOLID-STATE ELECTRONICS, 2001, 45 (05) : 697 - 702
  • [46] ENERGY-BAND STRUCTURE FOR STRAINED P-TYPE SI1-XGEX
    MANKU, T
    NATHAN, A
    PHYSICAL REVIEW B, 1991, 43 (15): : 12634 - 12637
  • [47] Full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substrates
    Bufler, FM
    Graf, P
    Keith, S
    Meinerzhagen, B
    APPLIED PHYSICS LETTERS, 1997, 70 (16) : 2144 - 2146
  • [48] Valence band structure and hole mobility of strained Ge/(111)Si1-xGex
    Song, Jian-Jun
    He, Zhu
    Gao, Xiang-Yu
    Zhang, He-Ming
    Hu, Hui-Yong
    Yi, Lv
    Journal of Computational and Theoretical Nanoscience, 2015, 12 (10) : 3201 - 3205
  • [49] High electron mobility in strained Si channel of Si1-xGex/Si/Si1-xGex heterostructure with abrupt interface
    Sugii, N
    Nakagawa, K
    Kimura, Y
    Yamaguchi, S
    Miyao, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (8A) : A140 - A142
  • [50] CL IMAGING OF SI/SI1-XGEX/SI QUANTUM-WELLS GROWN BY RTCVD
    HIGGS, V
    LIGHTOWLERS, EC
    STURM, JC
    XIAO, X
    WRIGHT, PJ
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 679 - 682
12345