Influence of Ta2O5 on the electrical properties of ZnO- and CoO-doped SnO2 varistors

被引：11
|
作者：
Filho, FM
Simoes, AZ
Ries, A
Silva, IP
Perazolli, L
Longo, E
Varela, JA
机构：
[1] UNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil
[2] UFSCar, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil
来源：
CERAMICS INTERNATIONAL | 2004年 / 30卷 / 08期
基金：
巴西圣保罗研究基金会;
关键词：
powders : solid state reaction; varistors; tin dioxide;
D O I：
10.1016/j.ceramint.2004.01.007
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
SnO2-based varistors doped with 0.5% cobalt, 0.5% zinc and various tantalum amounts were prepared by the solid-state route. Experimental evidence shows that small quantities of Ta2O5 improve the nonlinear properties of the samples significantly. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1050 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.
引用
收藏
页码：2277 / 2281
页数：5
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