High-rate microcrystalline silicon for solar cells

被引：2

作者：

Smit, C ^{[1
]}

Korevaar, BA ^{[1
]}

Petit, AMHN ^{[1
]}

van Swaaij, RACMM ^{[1
]}

Kessels, WMM ^{[1
]}

van de Sanden, MCM ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190815

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In order to produce thin silicon films for solar cells at high growth rates we deposited films with a cascaded arc expanding thermal plasma. We demonstrate the power of this technique by applying amorphous films deposited at rates up to 1.4 nm/s in solar cells. We used the same deposition technique to produce microcrystalline silicon films. Growth rates up to 3.7 nm/s are achieved. The material structure is analyzed using Raman spectroscopy and XRD. We see that the crystalline fraction increases with the H-2 flow, whereas the amorphous and the void fraction decrease.

引用

页码：1170 / 1173

页数：4

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