Correlation of oxygen precipitation and void annihilation in nitrogen-doped Czochralski silicon

被引：0
|
作者：
Yu, XG [1 ]
Ma, XY [1 ]
Yang, DR [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
Czhochralski silicon; nitrogen doping; void;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of oxygen precipitation on the annihilation of voids in nitrogen-doped Czochralski (NCZ) silicon has been investigated in this paper. It was found that, in comparison with the control CZ silicon wafers, the NCZ silicon wafer possessed denser crystal originated particles (COPs) in smaller size. On the other hand, it was indicated that, by low-high two step terhmal cycles, the COPs in NCZ silicon could be annihilated in pace with the significant nitrogen enhanced oxygen precipitation, while, the CON in CZ wafer were difficult to be annihilated, accompanying with the silight oxygen precipitation. Based on the facts, the correlation of oxygen precipitation and void annihilation in NCZ silicon was discussed.
引用
收藏
页码：2391 / 2394
页数：4
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