A Raman study of coupled plasmon LO phonon modes at ZnSe-GaAs interfaces

被引：2
|
作者：
Pages, O
Soltani, M
Zaoui, A
Certier, M
Laurenti, JP
Cloitre, T
Aulombard, RL
Bormann, D
Khelifa, B
机构：
[1] Univ Metz, Lab Spectrometrie Opt Mat, F-57078 Metz 3, France
[2] Univ Montpellier 2, CNRS URA 357, Etud Semicond Grp, F-34095 Montpellier, France
[3] Univ Artois, Equipe Spectrometrie Raman, Lab Physicochim Interfaces & Applicat, F-62307 Lens, France
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
D O I：
10.1016/S0022-0248(98)80319-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Raman scattering is used to investigate p-type accumulation zones on the substrate side of ZnSe-GaAs heterostructures. The intensity imbalance between (i) the near-interfacial phonon-plasmon coupled mode located below the TO frequency and (ii) the uncoupled LO mode from the deep substrate, is studied at a single wavelength under increasing illumination. Competition between electric field-induced scattering and more trivial scattering volume effects is discussed. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：188 / 192
页数：5
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