Band-edge photoluminescence in polycrystalline ZnO films at 1.7K

被引：145
|
作者：
Studenikin, SA
Cocivera, M [1 ]
Kellner, W
Pascher, H
机构：
[1] Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada
[2] Univ Bayreuth, D-95440 Bayreuth, Germany
来源：
JOURNAL OF LUMINESCENCE | 2000年 / 91卷 / 3-4期
关键词：
zinc oxide; polycrystalline films; phonons; two-phonon replica; band-edge emission; annealing;
D O I：
10.1016/S0022-2313(00)00213-1
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
This paper presents an investigation of the low-temperature band-edge photoluminescence (PL) of ZnO films prepared by spray pyrolysis. Annealing samples in forming gas modified the PL spectra and density of conduction electrons. Photoluminescence revealed a complicated multi-line structure. The origin of the observed near-UV lines was identified in terms of bound exciton complexes and the phonon replicas. In annealed high-conductivity samples this was the usual optical phonon replica with a period of 71.6 meV. In low-conductive as-grown films an oscillating structure with a period of 108 meV was revealed. This new structure was attributed to a two transverse optical phonon replica. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：223 / 232
页数：10
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