Greatly enhanced sub-bandgap photocurrent in porous GaP photoanodes

被引：39
|
作者：
Marin, FI
Hamstra, MA
Vanmaekelbergh, D
机构：
[1] Department of Condensed Matter, Debye Institute, Utrecht University
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 03期
关键词：
D O I：
10.1149/1.1836597
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
It has been found that porous GaP photoanodes show considerable photocurrent when illuminated with sub-bandgap Light, in contrast to flat electrodes. The origin of this enhanced response to sub-bandgap light was investigated. Due to the morphology of the porous structure, photons are more effectively absorbed. Light absorption by surface electronic levels is found to be an important source of sub-bandgap photocurrent.
引用
收藏
页码：1137 / 1142
页数：6
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