Analytical explanation of different RF characteristics exhibited with common-emitter and common-base bipolar transistors

被引：0

作者：

Jiang, NY ^{[1
]}

Wang, GG ^{[1
]}

Ma, ZQ ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, the differences of RF characteristics exhibited with bipolar transistors between common-emitter and common-base configurations under different stability conditions are analytically elucidated. The analyses are verified with measured results from SiGe heterojunction bipolar transistors. These analyses markedly advocate that different configurations should be used at different amplification frequencies in order to maximize the RF performance potential of bipolar transistors.

引用

页码：112 / 115

页数：4

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