Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist

被引：90

作者：

Kozawa, Takahiro ^{[1
]}

Oizumi, Hiroaki ^{[2
]}

Itani, Toshiro ^{[2
]}

Tagawa, Seiichi ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Semicond Leading Edge Technol Inc Selete, Tsukuba, Ibaraki 3058569, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 03期

关键词：

ACID GENERATION EFFICIENCY; X-RAY-LITHOGRAPHY; ELECTRON-BEAM; IMAGE-CONTRAST; EXPOSURE TOOL; HALF-PITCH; RADIATION;

D O I：

10.1143/APEX.3.036501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the relationship between line edge roughness (LER) and the concentration gradient of chemical compounds that determines the solubility of the resist (chemical gradient). Two-dimensional (half-pitch and exposure dose) matrices of resist line width and LER were analyzed on the basis of the sensitization mechanisms of chemically amplified resists for extreme ultraviolet (EUV) lithography. The latent images of resist patterns were successfully reproduced by assuming that LER is inversely proportional to the chemical gradient. The product of LER and normalized chemical gradient was 0.31. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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