Reliability of Electronic Devices: Nanoscale Studies Based on the Conductive Atomic Force Microscope

被引：0
|
作者：
Lanza, Mario [1 ]
机构：
[1] Soochow Univ, Inst Funct Nano & Soft Mat, Suzhou, Peoples R China
来源：
2016 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW) | 2016年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：XIV / XIV
页数：1
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