Sputter deposition of copper oxide films

被引：20

作者：

Dulmaa, A. ^{[1
]}

Vrielinck, H. ^{[1
]}

Khelifi, S. ^{[1
]}

Depla, Diederik ^{[1
]}

机构：

[1] Univ Ghent, Dept Solid State Sci, Krijgslaan 281 S1, B-9000 Ghent, Belgium

来源：

APPLIED SURFACE SCIENCE | 2019年 / 492卷

关键词：

Direct current magnetron sputtering; Copper oxide; Energy per atom; Negative ion bombardment; THIN-FILMS; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; CU2O; OXYGEN; MICROSTRUCTURE; SPECTROSCOPY; GROWTH; VAPOR;

D O I：

10.1016/j.apsusc.2019.06.263

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Copper oxide thin films are grown by reactive magnetron sputter deposition. To define the parameter space to obtain CuO films, the influence of the oxygen partial pressure, the total pressure, and the discharge current was investigated on the phase formation. A clear change from pure copper, over cuprite (Cu2O), and paramelaconite (Cu4O3) to tenorite (CuO) thin films with increasing oxygen partial pressure was observed using X-ray diffraction and Fourier transform infrared spectroscopy. The main driving force defining the phase composition is the oxygen partial pressure, while the influence of the total pressure, and the discharge current is minimal. A clear condition to obtain phase pure CuO films could be defined based on the measured discharge voltage. Both the domain size, and the Bragg peak position for pure CuO thin films can be correlated to the negative ion bombardment during film growth.

引用

页码：711 / 717

页数：7

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