Mechanisms for Pressure-Induced Isostructural Phase Transitions in EuO

被引:8
|
作者
Desmarais, Jacques K. [1 ,2 ,3 ,4 ,5 ]
Erba, Alessandro [1 ,2 ]
Pan, Yuanming [4 ]
Civalleri, Bartolomeo [1 ,2 ]
Tse, John S. [5 ]
机构
[1] Univ Torino, Dipartimento Chim, Via P Giuria 7, I-10125 Turin, Italy
[2] Univ Torino, NIS Ctr Interdipartimentale, Via P Giuria 7, I-10125 Turin, Italy
[3] Univ Pau & Pays Adour, IPREM UMR5254, Equipe Chim Phys, F-64053 Pau 9, France
[4] Univ Saskatchewan, Dept Geol Sci, Saskatoon, SK S7N 5E2, Canada
[5] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
HARTREE-FOCK GRADIENTS; INSULATOR-METAL TRANSITION; CELL PARAMETER; VALENCE; COLLAPSE; RESPECT; SILICON;
D O I
10.1103/PhysRevLett.126.196404
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study pressure-induced isostructural electronic phase transitions in the prototypical mixed valence and strongly correlated material EuO using the global-hybrid density functional theory. The simultaneous presence in the valence of highly localized d- and f-type bands and itinerant s- and p-type states, as well as the half-filled f-type orbital shell with seven unpaired electrons on each Eu atom, have made the description of the electronic features of this system a challenge. The electronic band structure, density of states, and atomic oxidation states of EuO are analyzed in the 0-50 GPa pressure range. An insulator-to-metal transition at about 12 GPa of pressure was identified. The second isostructural transition at approximately 30-35 GPa, previously believed to be driven by an oxidation from Eu(II) to Eu(III), is shown instead to be associated with a change in the occupation of the Eu d orbitals, as can be determined from the analysis of the corresponding atomic orbital populations. The Eu d band is confined by the surrounding oxygens and split by the crystal field, which results in orbitals of e(g) symmetry (i.e., d(x2-y2) and d(2z2-x2-y2), pointing along the Eu-O direction) being abruptly depopulated at the transition as a means to alleviate electron-electron repulsion in the highly compressed structures.
引用
收藏
页数:6
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