Enhanced Signal-to-Noise Ratio of Ge/Ge1-xSnx/Ge based Multiple Quantum Well Heterojunction Phototransistor for SWIR Photodetection

被引：0

作者：

Kumar, Harshvardhan ^{[1
]}

Basu, Rikmantra ^{[1
]}

机构：

[1] Natl Inst Technol Delhi, Elect & Commun Engn Dept, Sect A-7, New Delhi 110040, India

来源：

2019 URSI ASIA-PACIFIC RADIO SCIENCE CONFERENCE (AP-RASC) | 2019年

关键词：

GeSn-alloy; heterojunction phototransistors; Multiple Quantum Well; signal-to-noise ratio;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied noise characteristics and signal-to-noise ratio (SNR) of n-Ge/p-Ge1-xSnx/n-Ge Heterojunction Transistor (HPT) with multiple quantum well (MQW) inserted in the base and different base-width for efficient detection at 1.55 mu m. The MQW inserted in the base significantly improves SNR in the high-frequency region, leading to efficient detection in the fiber-optic telecommunication windows. The results show that SNR is not only dependent on the frequency, but also on the base-width and number of quantum wells (QWs). The estimated result shows that SNR of >61 dB up to 100 GHz can be achieved, which ensures the operation of the device in the high-frequency range and low-noise detector.

引用

页数：4

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