Miniband formulation in Ge/Si quantum dot array

被引：6
|
作者：
Tsai, Yi-Chia [1 ]
Lee, Ming-Yi [1 ]
Li, Yiming [1 ]
Samukawa, Seiji [2 ,3 ]
机构：
[1] Natl Chiao Tung Univ, Inst Commun Engn, Dept Elect & Comp Engn, Parallel & Sci Comp Lab, Hsinchu 300, Taiwan
[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, Adv Inst Mat Res, World Premier Int Res Ctr Initiative, Sendai, Miyagi 9808577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期
关键词：
PHOTOLUMINESCENCE; EFFICIENCY; SHAPE;
D O I：
10.7567/JJAP.55.04EJ14
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, we estimate the coupling effect of miniband structure and density of states (DoS) resulting from different qunatum-dot physical parameters in a well-aligned Ge/Si quantum dot (QD) array fabricated by neutral beam etching technology. The density of QDs dominates the coupling effect and miniband's bandwidth, the radius of QDs affects the magnitude of energy levels and miniband bandwidth, and the thickness of QDs has a great impact on the magnitude of energy levels. Among the different shapes of Ge/Si QDs, discoid QDs exhibit the most band crossing and broadest bandwith under the same physical parameters. (C) 2016 The Japan Society of Applied Physics
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页数：5
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