From 1D chain to 3D network:: Syntheses, structures, and properties of K2MnSn2Se6, K2MnSnSe4, and K2Ag2SnSe4

被引:47
|
作者
Chen, X
Huang, XY
Fu, AH
Li, J [1 ]
Zhang, LD
Guo, HY
机构
[1] Rutgers State Univ, Dept Chem, Camden, NJ 08102 USA
[2] Beijing Univ Chem Technol, Dept Appl Chem, Beijing 100029, Peoples R China
关键词
D O I
10.1021/cm0000447
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
K2MnSn2Se6 (I), K2MnSnSe4 (II), and K2Ag2SnSe4 (III) were prepared by molten-salt (alkali-metal polyselenide flux) reactions at intermediate temperature (400-520 degrees C). Their crystal structures were determined by single-crystal X-ray diffraction techniques. Crystal data for I: space group P4/ncc, a = 8.167(1), c = 19.724(4) Angstrom, Z = 4, R1/wR2 = 0.0435/0.0722 for 592 observed reflections and 29 variables; crystal data for II: space group P (4) over bar n2, 10.574(1), c = 8.301(2) Angstrom, Z = 2, R1/wR2 = 0.0339/0.0939 for 1208 observed reflections and 40 parameters; crystal data for III: space group P2/c, a = 7.575(2), b = 5.920(1), c 12.148(2) Angstrom, beta = 113.56(3)degrees, Z = 2, R1/wR2 = 0.0595/0.1135 for 1098 observed reflections and 45 parameters. The crystal structure of I consists of infinite (1)(infinity)[MnSn2Se6](2-) anionic chains containing [Sn2Se64-] units linked by tetrahedrally coordinated Mn2+ ions, with the K+ cations situated between the chains. II contains a three-dimensional framework formed by corner- and edge-sharing SnSe4 and MnSe4 tetrahedra, with large channels hosting the K+ cations. III is a layered compound containing (2)(infinity)[Ag2SnSe4](2-) anionic layers separated by K+. counterions. The anionic layer is formed by parallel SiS2-type (1)(infinity)[AgSe2](3-) chains crosslinked by tetrahedral SnSe4 via bridging selenium atoms of the chains. The results from differential scanning calorimetry (DSC) measurements show that I is stable up to 590 degrees C, II decomposes at; about 243 degrees C, and III melts congruently at about 510 degrees C. I, II, and III are semiconductors with estimated band gaps of 2.0, 1.7, and 1.8 eV, respectively.
引用
收藏
页码:2385 / 2391
页数:7
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