Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells

被引：26

作者：

Hwang, Jinyoung ^{[1
]}

Lee, Kyusang ^{[1
]}

Teran, Alan ^{[1
]}

Forrest, Stephen ^{[1
]}

Phillips, Jamie D. ^{[1
]}

Martin, Andrew J. ^{[2
]}

Millunchick, Joanna ^{[2
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

PHYSICAL REVIEW APPLIED | 2014年 / 1卷 / 05期

关键词：

VOLTAGE;

D O I：

10.1103/PhysRevApplied.1.051003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multiphoton transitions in GaSb/GaAs quantum-dot intermediate-band solar cells are investigated at variable temperature and excitation intensity. A transition temperature is observed that corresponds to the crossover between quantum-dot intraband transitions dominated by thermal escape due to infrared photogeneration. The transition temperature follows an Arrhenius relation with an activation energy of 220 meV that corresponds to the energy barrier observed by holes in the quantum dots. The transition temperature is in the range of 160-225 K for the temperature range studied, significantly higher than observed in previous type-I quantum-dot systems. These results illustrate the potential of type-II structures with deep confinement potentials and strong intraband absorption for future intermediate-band solar cells and quantum devices.

引用

页数：5

共 50 条

[21] Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells
Tayagaki, Takeshi
Sugaya, Takeyoshi
APPLIED PHYSICS LETTERS, 2016, 108 (15)
[22] ENHANCED PHOTOVOLTAIC PROPERTIES OF InAs/GaAs QUANTUM-DOT INTERMEDIATE-BAND SOLAR CELLS BY USING CYLINDRICAL QUANTUM DOTS
Olyaee, S.
Farhadipour, F.
Ghahremanirad, E.
DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2018, 13 (01) : 271 - 277
[23] Computational Design of the Intermediate-Band Solar Cells Based on the Quantum Dot Superlattices
Shao, Qinghui
Balandin, Alexander A.
Fedoseyev, Alexander I.
Turowski, Marek
NANOSCALE PHOTONIC AND CELL TECHNOLOGIES FOR PHOTOVOLTAICS, 2008, 7047
[24] Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals
Zhang, Qiubo
Wei, Wensheng
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2013, 113 (01): : 75 - 82
[25] Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals
Qiubo Zhang
Wensheng Wei
Applied Physics A, 2013, 113 : 75 - 82
[26] ENERGY BAND STRUCTURE AND ABSORPTION COEFFICIENTS IN THE QUANTUM-DOT INTERMEDIATE BAND SOLAR CELLS
Hu, W. G.
Inoue, T.
Kojima, O.
Kita, T.
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 1808 - 1813
[27] On the reported experimental evidence for the quasi-Fermi level split in quantum-dot intermediate-band solar cells
Abouelsaood, Ahmed A.
Ghannam, Moustafa Y.
Poortmans, Jef
PROGRESS IN PHOTOVOLTAICS, 2013, 21 (02): : 209 - 216
[28] Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells
Shoji, Yasushi
Tamaki, Ryo
Okada, Yoshitaka
AIP ADVANCES, 2017, 7 (06):
[29] Temperature dependence of quantum-wire intermediate-band solar cells
Sarollahi, Mirsaeid
Kunets, Vasyl P.
Mazur, Yuriy I.
Mortazavi, Mansour
Salamo, Gregory J.
Ware, Morgan
PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES VI, 2017, 10099
[30] A hot-carrier assisted InAs/AlGaAs quantum-dot intermediate-band solar cell
Behaghel, B.
Tamaki, R.
Chen, H-L
Rale, P.
Lombez, L.
Shoji, Y.
Delamarre, A.
Cattoni, A.
Collin, S.
Okada, Y.
Guillemoles, J-F
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (08)

← 1 2 3 4 5 →