Improvement of infrared detection using Ge quantum dots multilayer structure

被引：31
|
作者：
Kolahdouz, M. [1 ]
Farniya, A. Afshar [1 ]
Di Benedetto, L. [1 ]
Radamson, H. H. [1 ]
机构：
[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16640 Kista, Sweden
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 21期
关键词：
Ge-Si alloys; infrared detectors; interface roughness; internal stresses; noise; semiconductor epitaxial layers; semiconductor quantum dots; semiconductor quantum wells; thermal resistance; thermistors;
D O I：
10.1063/1.3441120
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Monocrystalline SiGe/Si multiquantum dot and well structures have been manufactured/compared as thermistor materials for infrared detection. The performance of the devices (both the thermal and electrical) has been very sensitive to the quality of the epitaxial layers which is evaluated by the interfacial roughness and strain amount. This study demonstrates that the devices containing quantum dots have higher thermal coefficient resistance 3.4%/K with a noise constant (K(1/f)) value of 2x10(-9). (C) 2010 American Institute of Physics. [doi:10.1063/1.3441120]
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页数：3
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