75 GHz 80 mW InP DHBT power amplifier

被引：0
|
作者：
Wei, Y [1 ]
Urteaga, M [1 ]
Griffith, Z [1 ]
Scott, D [1 ]
Xie, S [1 ]
Paidi, V [1 ]
Parthasarathy, N [1 ]
Rodwell, M [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a 75 GHz MMIC power amplifier in InP/InGaAs/InP DHBT transferred-substrate technology. The amplifier has 256 mum(2) total emitter area and exhibits a power gain of 5.5 dB at 75 GHz and a saturated output power of 19 dBm (80mW) under 1-dB gain compression. The DHBT employed by the amplifier has a lightly doped InP emitter epitaxial layer between the emitter and the emitter cap layer as a distributed ballast resistance to improve thermal stability. To our knowledge, this is the highest reported output power for a W-band HBT power amplifier.
引用
收藏
页码：919 / 921
页数：3
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