Aliens: A Novel Hybrid Architecture for Resistive Random-Access Memory

被引:8
|
作者
Wu, Bing [1 ]
Feng, Dan [1 ]
Tong, Wei [1 ]
Liu, Jingning [1 ]
Li, Shuai [1 ]
Yang, Mingshun [1 ]
Wang, Chengning [1 ]
Zhang, Yang [1 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Minist Educ China, Key Lab Informat Storage Syst,Sch Comp Sci & Tech, Wuhan, Hubei, Peoples R China
关键词
CHALLENGES;
D O I
10.1145/3240765.3240776
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Passive crossbar arrays of resistive random-access memory (RRAM) have shown great potential to meet the demands of future memory. By eliminating transistor per cell, the crossbar array possesses a higher memory density but introduces sneak currents which incur extra energy waste and reliability issues. The complementary resistive switch (CRS), consisting of two anti-serially stacked memristors, is considered as a promising solution to tfic., sneak current problem. However, the destructive read of the CRS results in an additional recovery write operation which strongly restricts its further promotion. Exploiting the dual CRS/meritristor mode of CRS devices, we propose Aliens, a novel hybrid architecture for resistive random-access memory which introduces one alien cell (memristor mode) for each wordline in the crossbar to provide a practical hybrid memory without operating system's intervention. Aliens draws advantages from both modes: restrained sneak current of CRS mode and non-destructive read of irieraristor mode. The simple and regular cell mode organization of Aliens enables an energy-saving read method and an effective mode switching strategy called Lazy-Switch. By exploiting memory access locality, Lazy-Switch delays and merges the recovery write operations of the CRS mode. Due to fewer recovery write operations and negligible sneak currents, Aliens achieves improvement in energy, overall endurance, arid access performance. The experiment results show that our design offers average energy savings of 13.9x compared with memristor-only memory, a memory lifetime 5.3x longer than CRS -only memory, and a competitive performance compared with mem ristor-on ly memory.
引用
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页数:8
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