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Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7
被引:0
|作者:
Hou Zhi-Ling
[1
,2
]
Cao Mao-Sheng
[1
]
Yuan Jie
[3
]
Song Wei-Li
[1
]
机构:
[1] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[2] Beijing Univ Chem Technol, Sch Sci, Beijing 100029, Peoples R China
[3] Cent Univ Nationalities, Sch Informat Engn, Beijing 100081, Peoples R China
基金:
中国国家自然科学基金;
关键词:
gamma-Y2Si2O7;
dielectric properties;
structural relaxation polarization;
low dielectric loss;
PRESSED SILICON-NITRIDE;
YTTRIUM DISILICATE;
OPTICAL-PROPERTIES;
H-BN;
CERAMICS;
BEHAVIOR;
NANOCOMPOSITES;
STRENGTH;
D O I:
暂无
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
This paper reports that single-phase gamma-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of gamma-Y2Si2O7 as a function of the temperature and frequency. The gamma-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 degrees C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared gamma-Y2Si2O7 differing from that of SiO2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.
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页数:5
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