Growth and characterization of II-VI structures for microcavities, distributed Bragg reflectors, and blue-green lasers

被引：0

作者：

Pessa, M ^{[1
]}

Rakennus, K ^{[1
]}

Uusimaa, P ^{[1
]}

Salokatve, A ^{[1
]}

Aherne, T ^{[1
]}

Doran, JP ^{[1
]}

Hegarty, J ^{[1
]}

机构：

[1] TRINITY COLL DUBLIN,DEPT PHYS,DUBLIN 2,IRELAND

来源：

COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper describes the preparation of ZnSe-based distributed Bragg reflectors (DBRs), microcavities, and edge-emitting lasers using molecular beam epitaxy in conjunction with an in situ growth monitoring method. MgZnSSe/ZnSSe DBR's with up to 90% reflectance have been prepared. A monolithic lambda-ZnSSe microcavity with MgZnSSe/ZnSSe DBR and ZnCdSe quantum wells have also been grown. The microcavity exhibits features which are related to the presence of resonant Fabry-Perot cavity and quantum well exciton modes. Edge-emitting MgZnSSe/ZnSSe/ZnCdSe lasers with inverted doping configuration and GaInP/AlInP barrier reduction layers have been made. They operate at room temperature in pulsed mode, emitting at a wavelength of 520 nm.

引用

页码：1163 / 1168

页数：6

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