Fabrication and characterization of PZT-PMWSN thin film using pulsed laser deposition

被引：2
|
作者：
Kim, CS [1 ]
Kim, SK [1 ]
Lee, SY [1 ]
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seodaemun Ku, Seoul 120749, South Korea
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2002年 / 5卷 / 2-3期
关键词：
piezoelectric; pulsed laser deposition; mechanical quality factor; electromechanical coupling coefficient;
D O I：
10.1016/S1369-8001(02)00088-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin PZT films are being developed for use in sensor and actuator application in micromechanical systems. For the use as sensor and actuator, it is desirable to combine high mechanical quality factor (Q(m)) with high piezoelectric constant (d) and high electro-mechanical coupling factor (k(p)). We fabricated PbZrxTi1-xO3-Pb(Mn,W,Sb,Nb)O-3 (PZT-PMWSN) targets with variations in the Zr/Ti ratio. The dielectric and piezoelectric properties of PZT-PMWSN ceramics were investigated as a function of Zr/Ti ratio. At the Zr/Ti ratio of 0.52/0.48, the electrical coupling factor (kp) and the mechanical quality factor (Q) showed a maximum value of 0.56 and 2344, respectively. The PZT-PMWSN thin film has been prepared on a Pt/Ti/SiO2/Si Substrate using pulsed laser deposition method. The structural property was characterized with XRD, SEM and ferroelectric hysteresis loop measurement were used to characterize the electrical properties of PZT-PMWSN thin film. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：93 / 96
页数：4
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