The Seebeck coefficient and phonon drag in silicon

被引:48
|
作者
Mahan, G. D. [1 ]
Lindsay, L. [2 ]
Broido, D. A. [3 ]
机构
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[3] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA
关键词
THERMOELECTRIC-POWER; ELECTRON-MOBILITY; SCATTERING MOBILITY; IMPURITY;
D O I
10.1063/1.4904925
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a theory of the phonon-drag Seebeck coefficient in nondegenerate semiconductors, and apply it to silicon for temperatures 30< T< 300 K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We find excellent agreement with the measurements of Geballe and Hull [Phys. Rev. 98, 940 ( 1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:7
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