Above room temperature ferromagnetism in Mn-ion implanted Si0.75Ge0.25

被引：0
|
作者：
Ko, V. [1 ]
Teo, K. L. [2 ]
Liew, T. [2 ]
Chong, T. C. [2 ]
机构：
[1] Natl Univ Singapore, NUS, Grad Sch Integrat Sci & Engn, Singapore 117597, Singapore
[2] Natl Univ Spore, Electr & Comp Engn Dept, Spokane, WA USA
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
magnetic semiconductor; manganese; silicon;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ferromagnetic behaviour above room temperature has been observed in Mn-ions implanted Si0.75Ge0.25. The 900 degrees C annealed sample with Mn dosage of 2x10(16) cm(-2) exhibit saturation magnetization, saturation field and coercive field of similar to 9 emu/cm(3) and similar to 1500 Oe and similar to 60 Oe respectively at 300K.
引用
收藏
页码：1229 / +
页数：2
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