BiFeO3 epitaxial thin films and devices: past, present and future

被引:296
|
作者
Sando, D. [1 ,2 ,3 ]
Barthelemy, A. [1 ]
Bibes, M. [1 ]
机构
[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France
[2] Seoul Natl Univ, Ctr Correlated Electron Syst, Inst Basic Sci, Seoul 151747, South Korea
[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
基金
欧洲研究理事会;
关键词
BiFeO3; multiferroics; devices; oxide electronics; strain engineering; INDUCED PHASE-TRANSITIONS; ELECTRIC-FIELD CONTROL; DOMAIN-WALLS; FERROELECTRIC CONTROL; NANOSCALE CONTROL; ROOM-TEMPERATURE; EXCHANGE BIAS; ELECTROSTATIC MODULATION; STRUCTURAL TRANSITION; POLARIZATION ROTATION;
D O I
10.1088/0953-8984/26/47/473201
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.
引用
收藏
页数:23
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