Non-linear noise mechanisms in SiGeBiCMOS devices

被引：1
|
作者：
Regis, M [1 ]
Borgarino, M [1 ]
Kovacic, S [1 ]
Lafontaine, H [1 ]
Llopis, O [1 ]
Tournier, E [1 ]
Bary, L [1 ]
Plana, R [1 ]
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
来源：
2000 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2000年
关键词：
D O I：
10.1109/SMIC.2000.844323
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：163 / 166
页数：4
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