Preparation and characterization of the quantum dot quantum well system CdS/CuS/CdS

被引：0
|
作者：
Chen, HM [1 ]
Huang, XF [1 ]
Huang, HB [1 ]
Xu, L [1 ]
Xu, J [1 ]
Chen, KJ [1 ]
Feng, D [1 ]
机构：
[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源：
THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 1998年 / 3175卷
关键词：
sol-gel; nanocrystals; quantum dot quantum well; optical properties; CdS; CuS;
D O I：
10.1117/12.300681
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The synthesis and the characterization of the quantum dot quantum well (QDQW) system are described. The chemical synthesis and substitution method are used to synthesize the three-layered structure compound CdS/CuS/CdS which consists of a core of the CdS nanocrystal and a well of monolayers of CuS capped by monolayers of CdS acting as the outermost shell. The results of Inductive Coupled Plasma Mass Spectroscopy (ICP-MS) measurement and the absorption spectra confirm the formation of the three-layered system CdS/CuS/CdS.
引用
收藏
页码：32 / 36
页数：5
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