Interface phonon polariton coupling to enhance graphene absorption

被引:6
|
作者
Chen, Zhenyao [1 ]
Mei, Junjie [1 ]
Zhang, Ye [1 ]
Tan, Jishu [1 ]
Xiong, Qing [1 ]
Chen, Changhong [1 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
interface phonon polariton (IPhP); infrared absorption enhancement; graphene photodetector; SURFACE;
D O I
10.1007/s12200-019-0957-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Here we present a graphene photodetector of which the graphene and structural system infrared absorptions are enhanced by interface phonon polariton (IPhP) coupling. IPhPs are supported at the SiC/AlN interface of device structure and used to excite interband transitions of the intrinsic graphene under gated-field tuning. The simulation results show that at normal incidence the absorbance of graphene or system reaches up to 43% or closes to unity in a mid-infrared frequency range. In addition, we found the peak-absorption frequency is mainly decided by the AlN thickness, and it has a red-shift as the thickness decreases. This structure has great application potential in graphene infrared detection technology.
引用
收藏
页码:445 / 449
页数:5
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