Probing of Free Charge Carriers in Nanostructured Silicon Layers by Attenuated Total Reflectance Technique

被引：6

作者：

Rodichkina, Sofia P. ^{[1
,2
]}

Nychyporuk, Tetyana ^{[2
]}

Pastushenko, Anton ^{[2
,3
]}

Timoshenko, Victor Yu. ^{[1
,4
,5
]}

机构：

[1] Lomonosov Moscow State Univ, Fac Phys, Leninskie Gory 1, Moscow 119991, Russia

[2] Univ Lyon, Nanotechnol Inst Lyon, INSA Lyon, CNRS,UMR 5270, F-69621 Lyon, France

[3] Apollon Solar SAS, 66 Course Charlemagne, F-69002 Lyon, France

[4] Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, PhysBio Inst, Kashirskoe Sh 31, Moscow 115409, Russia

[5] Russian Acad Sci, Lebedev Phys Inst, Leninskiy Prospekt 53, Moscow 119991, Russia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2018年 / 12卷 / 09期

关键词：

attenuated total reflectance; doping; nanostructures; silicon; MESOPOROUS SILICON; OPTICAL-CONSTANTS; ABSORPTION;

D O I：

10.1002/pssr.201800224

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Infrared spectroscopy in attenuated total reflection (ATR) mode is used to evaluate the concentration of free charge carriers (electrons) in n-type macroporous silicon (Si) layers formed by metal-assisted chemical etching of crystalline silicon (c-Si) followed by additional doping with phosphorus. The ATR spectra are fitted by considering an effective medium approximation and Drude model, which is modified to describe an additional scattering of the charge carriers on the surface of Si nanocrystals. The electron concentration is of the order of 10(19)cm(-3) and it is slightly dependent on the layer thickness, while the surface scattering of charge carriers increases with layer thickness. The obtained results are discussed in view of possible applications of the ATR method for an express diagnostics of doping efficiency of Si nano- and microstructures for photonic and thermoelectrical applications.

引用

页数：5

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