All-epitaxial mode-confined vertical-cavity surface-emitting laser

被引：10
|
作者：
Lu, D [1 ]
Ahn, J [1 ]
Huang, H [1 ]
Deppe, DG [1 ]
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 12期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1795982
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A type of AlGaAs/GaAs-based vertical-cavity surface-emitting laser is demonstrated that creates a strongly-confined optical mode in an all-epitaxial heterostructure. The mode-confining region in this monolithic device is due to a lithographically defined intracavity phase-shifting layer. Analysis shows that the optical loss in the device can be less than for oxide-confinement. (C) 2004 American Institute of Physics.
引用
收藏
页码：2169 / 2171
页数：3
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