Young's modulus characterization for the fragile low-k film by the improved surface acoustic waves technique

被引:0
|
作者
Xiao, X [1 ]
Hata, N [1 ]
Yao, S [1 ]
Kikkawa, T [1 ]
机构
[1] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Low dielectric constant (k) materials applied for the ULSI interconnect insulator are required to meet the fast development of high speed devices. Introducing nanopores into dielectrics reduces their k value effectively but also degrades the film hardness drastically In this work, Young's moduli of several promising porous low-k films are determined by an improved technique of surface acoustic waves (SAWs). The twin-transducer is introduced to insure the propagation alignment of the laser generated SAWs, consequently increase the accuracy of the measurement.
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页码:528 / 531
页数:4
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