Fabrication of thick silicon nitride by reaction bonding and post-sintering

被引:9
|
作者
Kondo, Naoki
Hyuga, Hideki
Kita, Hideki
Kaba, Takahiro
机构
[1] Natl Inst Adv Ind Sci & Technol, AIST, Adv Mfg Res Inst, Moriyama Ku, Nagoya, Aichi 4638510, Japan
[2] Kubota Co Ltd, Hirakata, Osaka 5738573, Japan
关键词
silicon nitride; reaction bonding; post-sintering; thickness; low cost; silicon;
D O I
10.2109/jcersj.115.285
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Reaction-bonded silicon nitride has a potential to lower in cost, since it can be fabricated from low-cost silicon powder. However, because nitridation of silicon is an exothermal reaction, difficulty has been encountered in fabricating thick sintered bodies that exceed 20 mm. In this work, low-cost, thick silicon nitride was fabricated by reaction bonding and post-sintering, and its characteristics and problems were investigated. The obtained silicon nitride showed strength of approximately 500 MPa and fracture toughness of 4.2 MPa m(1/2). In fabricating a thick body, powder preparation seems to be an important factor in attaining stable mechanical properties.
引用
收藏
页码:285 / 289
页数:5
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