Steady-state photoconductivity of amorphous In-Ga-Zn-O

被引：20

作者：

Lee, Dong Hee ^{[1
]}

Kawamura, Ken-ichi ^{[2
]}

Nomura, Kenji ^{[2
]}

Yanagi, Hiroshi ^{[1
]}

Kamiya, Toshio ^{[1
,2
]}

Hirano, Masahiro ^{[2
]}

Hosono, Hideo ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Frontier Res Ctr, JST, ERATO SORST,Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 11期

关键词：

Amorphous oxide semiconductor; Mobility-lifetime product; Photoresponse;

D O I：

10.1016/j.tsf.2009.10.129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoresponse was investigated for an amorphous oxide semiconductor, In-Ga-Zn-O, by the steady-state photoconductivity (SSPC) method All the films exhibited extremely slow reversible photoresponses. Analysis of the transient photocurrent at varied temperatures provided similar activation energies of similar to 0.5 eV for both the time constants and the photoconductivity. Mobility-lifetime (mu tau) products were estimated from the photoconductivity spectra measured at the sweep rate of 2 nm/s, which monotonically increased with increasing dark conductivity sigma(D) (i e the Fermi level E-F becomes shallower) The obtained mu tau values are larger than those of hydrogenated amorphous silicon even if the E-F dependence is considered (C) 2009 Elsevier B.V. All rights reserved

引用

页码：3000 / 3003

页数：4

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