Recent progress in W-structured type-II superlattice photodiodes

被引：8
|
作者：
Aifer, E. H. [1 ]
Vurgaftman, I. [1 ]
Canedy, C. L. [1 ]
Warner, J. H. [1 ]
Jackson, E. M. [2 ]
Tischler, J. G. [1 ]
Meyer, J. R. [1 ]
机构：
[1] USN, Res Lab, 4555 Overlook Ave SW, Washington, DC 20375 USA
[2] SFA Inc, Crofton, MD 21114 USA
来源：
QUANTUM SENSING AND NANOPHOTONIC DEVICES IV | 2007年 / 6479卷
关键词：
type-II superlattice; strained layer superlattice; GaSb; III-V; IR detector; LWIR; photodiode;
D O I：
10.1117/12.714794
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Recently we have achieved significant improvements in the performance of LWIR type-II superlattice photodiodes, with discrete devices beginning to demonstrate dynamic impedance-area product (R0A) levels approaching the MCT trend line and quantum efficiency exceeding 30% in devices without anti-reflection coatings. We discuss the key innovations that have led to these improvements, including modified W-structures, band-gap grading, and hybrid superlattices.
引用
收藏
页数：11
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