Preparation and electrical properties of ITO thin films by dip-coating process

被引：82
|
作者：
Nishio, K
Sei, T
Tsuchiya, T
机构：
[1] Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Science University of Tokyo, Noda-shi, Chiba, 278, 2641, Yamazaki
来源：
JOURNAL OF MATERIALS SCIENCE | 1996年 / 31卷 / 07期
关键词：
D O I：
10.1007/BF00372189
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium tin oxide (ITO) thin films were prepared on quartz glass substrates by a dip-coating process. The starting solution was prepared by mixing indium chloride dissolved in acetylacetone and tin chloride dissolved in ethanol. The ITO thin films containing 0 similar to 20 mol % SnO2 were successfully prepared by heat-treatment at above 400 degrees C. Chemical stability of sol were investigated by using a FTIR spectrometer. The electrical resistivity of the thin films decreased with increasing heat-treatment temperature, that is carrier concentration increased, and mobility decreased with increasing SnO2 content. The ITO thin films containing 12 mol % SnO2 showed the minimum resistivity of rho = 1.2 x 10(-3) (Omega cm). It also showed high carrier concentration of N = 1.2 x 10(20)(cm(-3)) and mobility mu(H) = 7.0(cm(2)V(-1)s(-1)).
引用
收藏
页码：1761 / 1766
页数：6
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