A 28GHz-band integrated GaAs Power Amplifier for 5G Mobile Communications

被引：0
|
作者：
Park, Bonghyuk [1 ]
Lee, Hui-Dong [1 ]
Jang, Seunghyun [1 ]
Kong, Sunwoo [1 ]
Wang, Seunghun [1 ]
Hyun, Seok-Bong [1 ]
机构：
[1] Elect & Telecommun Res Inst, Commun RF Res Sect, Daejeon, South Korea
来源：
2022 19TH INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2022年
关键词：
5G mobile communications; power amplifiers; pHEMT; 28; GHz; mm-Wave;
D O I：
10.1109/ISOCC56007.2022.10031407
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper describes a power amplifier(PA) that performs around 28 GHz for fifth generation mobile networks (5G) using 0.15-mu m E-mode GaAs pseudomorphic high electron mobility transistor (pHEMT) devices. The power amplifier with three-stage common-source architecture achieved a small signal gain of 16.7 dB, the output 1-dB compression power (OP1dB) of 22.8 dBm, and the power added efficiency at peak power of 20.5% at 28 GHz under 3-V supply voltage. At 27GHz the small signal gain is 18 dB, the OP1dB is 21.7 dBm, and the power-added efficiency at peak power is 16.3% under 3-V supply voltage.
引用
收藏
页码：376 / 377
页数：2
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