A Novel 2D Magnetometer Based on a Parallel-Field Silicon Hall Sensor

A CMOS 2D Hall magnetometer for in-plane vector measurements using an original design is tested. Its unique advantages are very low internal 1/f noise, minimal device complexity containing four contacts only, one and the same supply current generating the channel sensitivities, and non-observed cross-talk between the channels at induction B <= 0.25 T. The high effective circuitry fully compensates the offsets and the geometrical magnetoresistance of the outputs. The experimentally obtained sensitivities along the X- and Y- outputs are equal, reaching S-Rx = S-Ry approximate to 19 V/AT, and the noise is reduced at least 60 times.