Kesterite Cu2Zn(Sn,Ge)(S,Se)4 thin film with controlled Ge-doping for photovoltaic application

被引：31
|
作者：
Zhao, Wangen [1 ,2 ,3 ]
Pan, Daocheng [3 ]
Liu, Shengzhong [1 ,2 ,4 ]
机构：
[1] Shaanxi Normal Univ, Key Lab Appl Surface & Colloid Chem, Natl Minist Educ, Sch Mat Sci & Engn, Xian 710062, Peoples R China
[2] Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710062, Peoples R China
[3] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resource Utilizat, 5625 Renmin St, Changchun 130022, Jilin, Peoples R China
[4] Chinese Acad Sci, Dalian Natl Lab Clean Energy, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
来源：
NANOSCALE | 2016年 / 8卷 / 19期
关键词：
CU2ZNSN(S; SE)(4); SOLAR-CELLS; NANOCRYSTALS; EFFICIENCY; FABRICATION;
D O I：
10.1039/c6nr00959j
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Cu2ZnSn(S,Se)(4) (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)(4) thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm(2) without an anti-reflection layer.
引用
收藏
页码：10160 / 10165
页数：6
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