Effect of hydrogen ion beam treatment on Si nanocrystal/SiO2 superlattice-based memory devices

被引：4

作者：

Fu, Sheng-Wen ^{[1
]}

Chen, Hui-Ju ^{[1
]}

Wu, Hsuan-Ta ^{[1
]}

Chuang, Bing-Ru ^{[1
]}

Shih, Chuan-Feng ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, 1 Univ Rd, Tainan 70101, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2016年 / 367卷

关键词：

Hydrogen ion beam; Si nanocrystals; Memory; Retention time; Radiative defect centers; CHARGE STORAGE; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE;

D O I：

10.1016/j.apsusc.2016.01.076

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO2 superlattice-based memory devices with an improved memory window and retention properties. The SiO2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6V, and the leakage current decreased significantly by two orders, to under +/- 20V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：134 / 139

页数：6

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