Large photoelectric-gating effect of two-dimensional van-der-Waals organic/tungsten diselenide heterointerface

被引:29
|
作者
Cai, Zhi [1 ]
Cao, Min [1 ]
Jin, Zhepeng [1 ]
Yi, Kongyang [1 ]
Chen, Xiaosong [1 ]
Wei, Dacheng [1 ]
机构
[1] Fudan Univ, Dept Macromol Sci, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
MOS2; PHOTODETECTOR; ORGANIC-CRYSTALS; MULTILAYER MOS2; GRAPHENE; PHOTOTRANSISTORS; LIGHT; PHOTORESPONSE; ULTRAVIOLET; ENERGY; GAIN;
D O I
10.1038/s41699-018-0066-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photo-or photoelectric-gating modulation is a promising strategy for high-performance photodetectors, which amplifies photoresponsivity by long-lived trapped charges at the interface. However, the performance is normally limited by the uncontrollable trapping process. Here, we develop a large photoelectric-gating, which enhances interfacial charge trapping process by a van-der-Waals interface with an electric-gating tunable energy barrier in the band alignment. By synergy of photo-gating and electric-gating effects, responsivity and detectivity of 1,4-bis(4-methylstyryl)benzene/tungsten diselenide (WSe2) increase by 25-fold and 3-fold to 3.6 x 10(6) A/W and 8.6 x 10(14) Jones. High-quality two-dimensional van-der-Waals interface is of great importance. Sufficient supply of gas-phase molecules in physical vapor deposition is pivotal to obtain such interface between organic crystal and WSe2. As an application, an electric-gating switchable photodetector has been developed, showing great potential of this strategy not only in high-performance photodetectors but also in new photoelectrical devices.
引用
收藏
页数:7
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