Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs

被引：112
|
作者：
Suemune, I [1 ]
Uesugi, K
Walukiewicz, W
机构：
[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 19期
关键词：
D O I：
10.1063/1.1322633
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have observed a significant reduction in the temperature dependence of the absorption-edge energy in GaNxAs1-x alloys with x <0.04. The effect has been analyzed in terms of the recently introduced band anticrossing model that considers a coupling of the temperature-independent localized states of substitutional nitrogen atoms and the temperature-dependent extended states of GaAs. The model explains very well the alloy composition and the temperature dependence of the absorption-edge energy. We also compare the parameters that determine the temperature dependence of the band-gap energies in GaNAs and GaInNAs alloys. (C) 2000 American Institute of Physics. [S0003-6951(00)00545-3].
引用
收藏
页码：3021 / 3023
页数：3
相关论文
共 50 条
  • [41] Carriers Temperature Dependence of Energy Band Gap for Germanium
    M. H. Boukhatem
    Silicon, 2016, 8 : 309 - 312
  • [42] Carriers Temperature Dependence of Energy Band Gap for Germanium
    Boukhatem, M. H.
    SILICON, 2016, 8 (02) : 309 - 312
  • [43] DETERMINATION OF THE DEPENDENCE OF THE BAND-GAP ENERGY ON COMPOSITION FOR CD1-XZNXTE
    RENO, JL
    JONES, ED
    PHYSICAL REVIEW B, 1992, 45 (03): : 1440 - 1442
  • [44] Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO
    Schmidt-Grund, R.
    Ashkenov, N.
    Schubert, M. M.
    Czakai, W.
    Faltermeier, D.
    Benndorf, G.
    Hochmuth, H.
    Lorenz, M.
    Grundmann, M.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 271 - +
  • [45] TEMPERATURE-DEPENDENCE OF BAND-GAP AND COMPARISON WITH THRESHOLD FREQUENCY OF PURE GAAS LASERS
    CAMASSEL, J
    AUVERGNE, D
    MATHIEU, H
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2683 - 2689
  • [46] DEPENDENCE OF PSEUDOMORPHIC SEMICONDUCTOR BAND-GAP ON SUBSTRATE ORIENTATION
    HINCKLEY, JM
    SINGH, J
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2694 - 2696
  • [47] BAND-GAP ENERGY AND BAND LINEUP OF III-V-ALLOY SEMICONDUCTORS INCORPORATING NITROGEN AND BORON
    SAKAI, S
    UETA, Y
    TERAUCHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10): : 4413 - 4417
  • [48] The electrical band-gap energy of porous silicon measured versus sample temperature
    Frederiksen, JT
    Melcher, PG
    Veje, E
    JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) : 271 - 273
  • [49] The Electrical Band-Gap Energy of Porous Silicon Measured Versus Sample Temperature
    J.T. Frederiksen
    P.G. Melcher
    E. Veje
    Journal of Porous Materials, 2000, 7 : 271 - 273
  • [50] Band-gap energy and effective mass of BGaN
    Honda, Tohru
    Shibata, Masao
    Kurimoto, Makoto
    Tsubamoto, Mieko
    Yamamoto, Jun
    Kawanishi, Hideo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (5 B): : 2389 - 2393
12345