The structure of InAlN/GaN heterostructures for high electron mobility transistors

被引：22
|
作者：
Vilalta-Clemente, A. [1 ]
Poisson, M. A. [2 ]
Behmenburg, H. [3 ]
Giesen, C. [3 ]
Heuken, M. [3 ]
Ruterana, P. [1 ]
机构：
[1] CNRS ENSICAEN CEA UCBN, CIMAP, UMR 6252, F-14050 Caen, France
[2] Alcatel Thales, F-91460 Marcoussis, France
[3] AIXTRON AG, D-52134 Herzogenrath, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 05期
关键词：
InAIN/GaN heterostructures; microstructure; AFM-TEM characterization; HEMT; CHEMICAL-VAPOR-DEPOSITION; THREADING DISLOCATIONS; INVERSION DOMAIN; GAN LAYERS; SAPPHIRE; BOUNDARIES; PERFORMANCE; DENSITY; GROWTH;
D O I：
10.1002/pssa.200983119
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interlayer thickness is increased, the growth mode becomes three-dimensional. However, the formed islands are hundred of nanometers apart, and were not observed in the transmission electron microscope. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1105 / 1108
页数：4
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