The structure of InAlN/GaN heterostructures for high electron mobility transistors

被引：22

作者：

Vilalta-Clemente, A. ^{[1
]}

Poisson, M. A. ^{[2
]}

Behmenburg, H. ^{[3
]}

Giesen, C. ^{[3
]}

Heuken, M. ^{[3
]}

Ruterana, P. ^{[1
]}

机构：

[1] CNRS ENSICAEN CEA UCBN, CIMAP, UMR 6252, F-14050 Caen, France

[2] Alcatel Thales, F-91460 Marcoussis, France

[3] AIXTRON AG, D-52134 Herzogenrath, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 05期

关键词：

InAIN/GaN heterostructures; microstructure; AFM-TEM characterization; HEMT; CHEMICAL-VAPOR-DEPOSITION; THREADING DISLOCATIONS; INVERSION DOMAIN; GAN LAYERS; SAPPHIRE; BOUNDARIES; PERFORMANCE; DENSITY; GROWTH;

D O I：

10.1002/pssa.200983119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interlayer thickness is increased, the growth mode becomes three-dimensional. However, the formed islands are hundred of nanometers apart, and were not observed in the transmission electron microscope. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1105 / 1108

页数：4

共 50 条

[1] InAlN/AlN/GaN heterostructures for high electron mobility transistors
Usov, S. O.
Sakharov, A. V.
Tsatsulnikov, A. F.
Lundin, V. W.
Zavarin, E. E.
Nikolaev, A. E.
Yagovkina, M. A.
Zemlyakov, V. E.
Egorkin, V. I.
Ustinov, V. M.
3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
[2] Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors
Katzer, DS
Storm, DF
Binari, SC
Shanabrook, BV
Torabi, A
Zhou, L
Smith, DJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1204 - 1208
[3] Ultrathin InAlN/GaN heterostructures with high electron mobility
Fang, Y. L.
Feng, Z. H.
Yin, J. Y.
Zhang, Z. R.
Lv, Y. J.
Dun, S. B.
Liu, B.
Li, C. M.
Cai, S. J.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05): : 1006 - 1010
[4] Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors
Lugani, Lorenzo
Carlin, Jean-Francois
Py, Marcel A.
Martin, Denis
Rossi, Francesca
Salviati, Giancarlo
Herfurth, Patrick
Kohn, Erhard
Blaesing, Juergen
Krost, Alois
Grandjean, Nicolas
JOURNAL OF APPLIED PHYSICS, 2013, 113 (21)
[5] Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors
Polyakov, A. Y.
Smirnov, N. B.
Shchemerov, I. V.
Yang, Jiancheng
Ren, Fan
Lo, Chien-Fong
Laboutin, Oleg
Johnson, J. W.
Pearton, S. J.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (02) : Q1 - Q7
[6] Side effects in InAlN/GaN high electron mobility transistors
Kourdi, Z.
Bouazza, B.
Guen-Bouazza, A.
Khaouani, M.
MICROELECTRONIC ENGINEERING, 2015, 142 : 52 - 57
[7] High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons
Azize, Mohamed
Hsu, Allen L.
Saadat, Omair I.
Smith, Matthew
Gao, Xiang
Guo, Shiping
Gradecak, Silvija
Palacios, Tomas
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (12) : 1680 - 1682
[8] Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
Gonzalez-Posada, Fernando
Azize, Mohamed
Gao, Xiang
Guo, Shiping
Monroy, Eva
Palacios, Tomas
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
[9] The Effects of Proton Irradiation on The Reliability of InAlN/GaN High Electron Mobility Transistors
Liu, L.
Lo, C. F.
Xi, Y. Y.
Wang, Y. X.
Kim, H-Y
Kim, J.
Pearton, S. J.
Laboutin, O.
Cao, Y.
Johnson, J. W.
Kravchenko, I. I.
Ren, F.
GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
[10] High performance InAlN/GaN high electron mobility transistors for low voltage applications
Mi, Minhan
Zhang, Meng
Wu, Sheng
Yang, Ling
Hou, Bin
Zhou, Yuwei
Guo, Lixin
Ma, Xiaohua
Hao, Yue
CHINESE PHYSICS B, 2020, 29 (05)

← 1 2 3 4 5 →