Logic based on magnetic tunnel junctions

被引:11
|
作者
Reiss, G. [1 ]
Meyners, D. [1 ]
机构
[1] Univ Bielefeld, Dept Phys, D-33501 Bielefeld, Germany
关键词
D O I
10.1088/0953-8984/19/16/165220
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Logic gate arrays are electronic devices delivering an output voltage which is a function of one, two or more input voltages. Usually, such circuits are made from CMOS subdevices ( transistors) which provide an output function defined by the layout of the device. Thus such logic gate arrays are not programmable after the production and, moreover, they are volatile because inputs and output lose the information after power shutdown. Here, we describe the use of magnetic tunnel junctions for the preparation of alternative logic gate arrays. These devices are nonvolatile, i.e. keep the inputs and output after power shutdown, and they are field programmable, i.e. the output function can be defined even 'on the fly' during the operation. Potential drawbacks such as scalability and reproducibility will be addressed and possible solutions for these problems will be discussed.
引用
收藏
页数:12
相关论文
共 50 条
  • [21] Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions
    Matsunaga, Shoun
    Hayakawa, Jun
    Ikeda, Shoji
    Miura, Katsuya
    Hasegawa, Haruhiro
    Endoh, Tetsuo
    Ohno, Hideo
    Hanyu, Takahiro
    APPLIED PHYSICS EXPRESS, 2008, 1 (09) : 0913011 - 0913013
  • [22] A high magnetic field sensor based on magnetic tunnel junctions
    Hehn, M
    Malinowski, G
    Sajieddine, M
    Jouguelet, E
    Schuhl, A
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 28 (01): : 79 - 81
  • [23] Spintronic logic design methodology based on spin Hall effect-driven magnetic tunnel junctions
    Kang, Wang
    Wang, Zhaohao
    Zhang, Youguang
    Klein, Jacques-Olivier
    Lv, Weifeng
    Zhao, Weisheng
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (06)
  • [24] Graphene As a Tunnel Barrier: Graphene-Based Magnetic Tunnel Junctions
    Cobas, Enrique
    Friedman, Adam L.
    van't Erve, Olaf M. J.
    Robinson, Jeremy T.
    Jonker, Berend T.
    NANO LETTERS, 2012, 12 (06) : 3000 - 3004
  • [25] Magnetic sensors based on long Josephson tunnel junctions
    Monaco, Roberto
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2012, 25 (11):
  • [26] Magnetoresistance in CuPc Based Organic Magnetic Tunnel Junctions
    Tokuc, H.
    Oguz, K.
    Burke, F.
    Coey, J. M. D.
    JOINT EUROPEAN MAGNETIC SYMPOSIA (JEMS), 2011, 303
  • [27] Noise of MgO-based magnetic tunnel junctions
    Polovy, H.
    Guerrero, R.
    Scola, J.
    Pannetier-Lecoeur, M.
    Fermon, C.
    Feng, G.
    Fahy, K.
    Cardoso, S.
    Almeida, J.
    Freitas, P. P.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 322 (9-12) : 1624 - 1627
  • [28] Memristive switching of MgO based magnetic tunnel junctions
    Krzysteczko, Patryk
    Reiss, Guenter
    Thomas, Andy
    APPLIED PHYSICS LETTERS, 2009, 95 (11)
  • [29] Effects of superparamagnetism in MgO based magnetic tunnel junctions
    Shen, Weifeng
    Schrag, Benaiah D.
    Girdhar, Anuj
    Carter, Matthew J.
    Sang, Hai
    Xiao, Gang
    PHYSICAL REVIEW B, 2009, 79 (01)
  • [30] Strontium Ferromolybdate-Based Magnetic Tunnel Junctions
    Suchaneck, Gunnar
    Artiukh, Evgenii
    Sobolev, Nikolai A.
    Telesh, Eugene
    Kalanda, Nikolay
    Kiselev, Dmitry A.
    Ilina, Tatiana S.
    Gerlach, Gerald
    APPLIED SCIENCES-BASEL, 2022, 12 (05):