Growth and characterization of well-aligned nc-Si/SiOx composite nanowires

被引：0
|
作者：
Wu, JJ [1 ]
Wong, TC [1 ]
Yu, CC [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan, Taiwan
来源：
ADVANCED MATERIALS | 2002年 / 14卷 / 22期
关键词：
D O I：
10.1002/1521-4095(20021118)14:22<1643::AID-ADMA1643>3.0.CO;2-Y
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A template-free and catalyst-free method for the growth of well-aligned nc-Si/SiOx composite nanowires was demonstrated. The structural and compositional characterization of the nanowires was studied by transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). It was revealed that the dendritic self-assemblies of Si nanorods were embedded in amorphous SiOx nanowires. The PL analysis showed that the nc-Si/SOx composite nanowires emitted blue-green light at room temperature.
引用
收藏
页码：1643 / 1646
页数：4
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