High power GaSb-based 2. 6 μm room-temperature laser diodes with InGaAsSb/ AlGaAsSb type I quantum-wells

被引：8

作者：

Chai Xiao-Li ^{[1
,2
]}

Zhang Yu ^{[1
,2
]}

Liao Yong-Ping ^{[1
,2
]}

Huang Shu-Shan ^{[1
,2
]}

Yang Cheng-Ao ^{[1
,2
]}

Sun Yao-Yao ^{[1
,2
]}

Niu Zhi-Chuan ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, State Key Lab Supperlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China

[2] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2017年 / 36卷 / 03期

基金：

中国国家自然科学基金;

关键词：

GaSb-based; laser diodes; quantum-wells; mid-infrared; WAVELENGTH; STRAIN;

D O I：

10.11972/j.issn.1001-9014.2017.03.001

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

GaSb-based InGaAsSb/AlGaAsSb type-I quantum-wells (QWs) laser diodes have been successfully fabricated. The wavelength is expanded to 2.6 mu m with high output power. The device structures were grown by molecular beam epitaxy. Under the optimized QWs growth temperature of 500 degrees C, the compressive strain of the QWs are defined to 1.3% for better optical quality, With a ridge width of 100 mu m and cavity length of 1. 5 mm, the maximum output power of single facet without coating has reached up to 328 mW under continuous wave (CW) operation at room temperature and 700 mW under pulse condition. The threshold current density is 402 A/cm(2).

引用

页码：257 / 260

页数：4

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