Type-I Diode Lasers for Spectral Region Above 3 μm

被引：76

作者：

Belenky, Gregory ^{[1
]}

Shterengas, Leon ^{[1
]}

Kipshidze, Gela ^{[1
]}

Hosoda, Takashi ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 05期

基金：

美国国家科学基金会;

关键词：

GaInSb; GaSb; metamorphic; mid-IR; semiconductor lasers; DIFFERENTIAL GAIN; POWER; PARAMETERS; STRAIN;

D O I：

10.1109/JSTQE.2011.2128300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we consider the role of carrier confinement in achieving high-power continuous wave (CW) room temperature operation of GaSb-based type-I quantum-well (QW) diode lasers at wavelengths above 3 mu m. The use of compressive strain and quinternary barrier materials to confine holes in the active QWs allows the fabrication of 3-mu m GaSb-based type-I QW diode lasers operating at 17 degrees C in the CW mode with output power of 360 mW. We will present the results of characterization of 2.2-mu m diode lasers grown on metamorphic virtual substrates. The use of InGaSb virtual substrate makes it possible to fabricate devices with As free QWs. The prospects of using virtual substrates for development of GaSb-based type-I lasers will be discussed.

引用

页码：1426 / 1434

页数：9

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