Photoelectrochromic Properties of TiO2-xNx/NiO Bilayer Thin Films

被引:1
|
作者
Jiang Lei [1 ]
Huang Hui [1 ]
Wang Chun-Tao [2 ]
Zhang Wen-Kui [1 ]
Gan Yong-Ping [1 ]
Tao Xin-Yong [1 ]
机构
[1] Zhejiang Univ Technol, Coll Chem Engn & Mat Sci, Hangzhou 310014, Zhejiang, Peoples R China
[2] Zhejiang Ocean Univ, Coll Electromech Engn, Zhoushan 316000, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Photoelectrochromism; N-doped TiO2; NiO; Photoelectrochemical property; Thin film; NICKEL-OXIDE FILMS; ELECTROCHROMIC PROPERTIES; VISIBLE-LIGHT; PHOTOCATALYTIC ACTIVITY; TUNGSTEN-OXIDE; ENERGY-STORAGE; TIO2; DEVICES; DEPOSITION; CHEMISTRY;
D O I
10.3866/PKU.WHXB20100226
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
N-doped TiO2 films were prepared on indium fin oxide(ITO) conducting glass by dc-reactive magnetron sputtering using a Ti target in an O-2/N-2/Ar mixture gas in combination with heat-treatment at 300-500 degrees C. The microstructure, optical and photoelectrochemical properties of the as-formed films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and UV-Vis transmittance spectrum. Highly porous NiO was deposited onto the N-doped TiO2 layer by chemical bath deposition to obtain ITO/TiO2-xNx/NiO bilayer thin films and they exhibited excellent and noticeable photoelectrochromism. The TiO2-xNx film annealed at 400 degrees C showed the highest photocurrent response. The color of films changed from colorless to brown and the transmittance varied from 79.0% to 12.6% at 500 nm after 1 h of irradiation.
引用
收藏
页码:299 / 303
页数:5
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